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UID:7@ezs-zveza.si
DTSTART;TZID=Europe/Ljubljana:20180404T140000
DTEND;TZID=Europe/Ljubljana:20180404T160000
DTSTAMP:20201009T084540Z
URL:https://www.ezs-zveza.si/dogodek/vabilo-na-predavanje-material-and-dev
 ice-challenges-for-future-cmos-technologies/
SUMMARY:Vabilo na predavanje “Material and Device Challenges for Future C
 MOS Technologies”
DESCRIPTION:\n\nDruštvo MIDEM\n\n \n\nPredsednik društva prof. dr. Marko 
 Topič\n\n \n\nVas vljudno vabi na predavanje\n\n \n\nProf. dr. Cora Claey
 sa\n\n \n\nKU Leuven\, Kapeldreef 75\, 3001 Leuven\n\n \n\n“Material and
  Device Challenges for Future CMOS Technologies”.\n \n\nPredavanje bo v 
 sredo\, 4. 4. 2018 ob 14:00 uri v predavalnici P1\n\n \n\nna Fakulteti 
 za elektrotehniko\, Tržaška cesta 25\, Ljubljana.\n\n \n\nPredavanje bo 
 potekalo v angleščini.\n\n \n\nAbstract:\n\n \n\nCMOS devices\, driven b
 y minimum device geometry\, performance enhancement\, cost issues and low 
 power consumption\,  are achieved by using optimizing process modules\, i
 ntroducing new materials and implementing novel device concepts. Stress en
 gineering\, ultra-shallow junctions\, high-k gate-stacks\, optimized proce
 ss sequences (e.g. gate-first vs replacement gate or gate-last)\,  raised
  source/drain\, use of high-mobility materials etc. are studied.  Improve
 d drive currents and electrostatic control trigger the exploration of Mult
 i-gate devices (MuGFETs). FD SOI technologies with ultra-thin body and bur
 ied oxide (UTBB SOI) have potential down to the 10 nm mode.  Tunnel-FETs 
 (TFETs)\, relying on band-to-band-tunnelling and allowing steep subthresho
 ld swings are gaining interest. Further scaling leads to gate-all-around a
 nd nanowire devices. Optimized epitaxial growth resulted in the fabricatio
 n of Ge (p-channel)\, III-V (n-channel) or hybrid Ge/III-V devices on a Si
  substrate. High mobility materials are implemented in TFET and nanowire s
 tructures. Challenges of some key process modules and device structures ar
 e discussed. Hot topics like 2D materials and devices and spintronic compu
 ting are addressed.\n\n
LOCATION:Fakulteta za elektrotehniko\, Tržaška c. 25\, 1000 Ljubljana\, S
 lovenia
X-APPLE-STRUCTURED-LOCATION;VALUE=URI;X-ADDRESS=Tržaška c. 25\, 1000 Ljub
 ljana\, Slovenia;X-APPLE-RADIUS=100;X-TITLE=Fakulteta za elektrotehniko:ge
 o:0,0
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